The KENNEDY (ELCIT) KB20 ELECTRON CHASSIS 687.301.710 + 687.303.950/D is developed on 2 boards.
- Left signal board is based around semiconductors Ics and discretes.
- Bottom Horizontal board contains all power parts.
The chassis is hybrid.
The CHASSIS TECHNOLOGY is based on ASIC'S which are:TBA311A17 TBA120SQ and lots of discretes.
TBA 311 TV SIGNAL PROCESSING CIRCUIT
The TBA311 is a monolithic integrated circuit in a 16-lead clual in-line or quad in—Iine
plastic package. It is intended for use as signal processing circuit for black and
white and colour television sets.
The circuit is designed for receivers equipped with tubes or transistors in the deflection
and video output stages, and with PNP or NPN transistors in the tuner and NPN in
the IF amplifier.
Only signals with the negative modulation can be handled by the circuit. The circuit
is protected against short circuit between video output and GND. The TBA 311 includes:
0 VIDEO PREAMPLIFIER with EIMITTER FOLLOWER OUTPUT
0 GATED AGC for VIDEO» IF AMPLIFIER and TUNER
0 NOISE INVERTER CIRCUIT for GATING AGC and SYNC. PULSE SEPARATOR
o HORIZONTAL SYNC. PIULSE SEPARATOR
0 VERTICAL SYNC. PULSE SEPARATOR
0 BLANKING FACILITY for the VIDEO AMPLIFIER.
All ICS circuits were made by:
SGS is Società Generale Semiconduttori - Aquila Tubi E Semiconduttori (SGS-ATES, "Semiconductor General Society - Tubes and Semiconductors Aquila"), later SGS Microelettronica, a former Italian company now merged into STMicroelectronics
- ATES (Aquila Tubi e Semiconduttori), a vacuum tube and semiconductor maker headquartered in the Abruzzese city of l'Aquila, who in 1961 changed its name into Azienda Tecnica ed Elettronica del Sud and relocated its manufacturing plant in the outskirts of the Sicilian city of Catania
- Società Generale Semiconduttori (founded in 1957 by Adriano Olivetti).
- The EHT Output is realized with a selenium rectifier.
The EHT selenium rectifier which is a Specially designed selenium rectifiers were once widely used as EHT rectifiers in television sets and photocopiers. A layer of selenium was applied to a sheet of soft iron foil, and thousands of tiny discs (typically 2mm diameter) were punched out of this and assembled as "stacks" inside ceramic tubes. Rectifiers capable of supplying tens of thousands of volts could be made this way. Their internal resistance was extremely high, but most EHT applications only required a few hundred microamps at most, so this was not normally an issue. With the development of inexpensive high voltage silicon rectifiers, this technology has fallen into disuse.A selenium rectifier is a type of metal rectifier, invented in 1933. They were used to replace vacuum tube rectifiers in power supplies for electronic equipment, and in high current battery charger applications.
The photoelectric and rectifying properties of selenium were observed by C. E. Fitts around 1886 but practical rectifier devices were not manufactured routinely until the 1930s. Compared with the earlier copper oxide rectifier, the selenium cell could withstand higher voltage but at a lower current capacity per unit area.