The chassis is even a steel structure holding the entire tv receiver parts.
Last original FIMI PHONOLA CHASSIS for portable models before to PHILIPS transition.
Power supply is located on bottom level cabinet and on upper left side the tuners.
AU107 and AU110 germanium transistors are used fabricated by ATES.
The line deflection is using the AU110 A Germanium PNP TRANSISTOR, see below the datasheet:
AU110
Germanium PNPCategory: Germanium Transistor, PNP Transistor, Transistor
MHz: <1 MHz
Amps: 10A
Volts: 160V
Ge PNP Power BJT
V(BR)CEO (V)=160
V(BR)CBO (V)=160
I(C) Abs.(A) Collector Current=10
Absolute Max. Power Diss. (W)=30
I(CBO) Max. (A)=100u
h(FE) Min. Static Current Gain=20
h(FE) Max. Current gain.=90
@I(C) (A) (Test Condition)=1.0
@V(CE) (V) (Test Condition)=2.0
Package=TO-3
Military=N
SGS/ATES is Società Generale Semiconduttori - Aquila Tubi E Semiconduttori (SGS-ATES, "Semiconductor General Society - Tubes and Semiconductors Aquila"), later SGS Microelettronica, a former Italian company now merged into STMicroelectronics
SGS Microelettronica and Thomson Semiconducteurs were both long-established semiconductor companies. SGS Microelettronica originated in 1972 from a previous merger of two companies:
- ATES (Aquila Tubi e Semiconduttori), a vacuum tube and semiconductor maker headquartered in the Abruzzese city of l'Aquila, who in 1961 changed its name into Azienda Tecnica ed Elettronica del Sud and relocated its manufacturing plant in the outskirts of the Sicilian city of Catania
- Società Generale Semiconduttori (founded in 1957 by Adriano Olivetti).
The tuning circuits has a large knob potentiometers tuning system which use voltage controlled capacitances such as varactor diodes as the frequency determining elements.
Therefore a stable AFC circuit is developed:
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Power supply is realized with mains transformer and Linear transistorized power supply stabilizer, A DC power supply apparatus includes a rectifier circuit which rectifies an input commercial AC voltage. The rectifier output voltage is smoothed in a smoothing capacitor. Voltage stabilization is provided in the stabilizing circuits by the use of Zener diode circuits to provide biasing to control the collector-emitter paths of respective transistors.A linear regulator circuit according to an embodiment of the present invention has an input node receiving an unregulated voltage and an output node providing a regulated voltage. The linear regulator circuit includes a voltage regulator, a bias circuit, and a current control device.
In one embodiment, the current control device is implemented as an NPN bipolar junction transistor (BJT) having a collector electrode forming the input node of the linear regulator circuit, an emitter electrode coupled to the input of the voltage regulator, and a base electrode coupled to the second terminal of the bias circuit. A first capacitor may be coupled between the input and reference terminals of the voltage regulator and a second capacitor may be coupled between the output and reference terminals of the voltage regulator. The voltage regulator may be implemented as known to those skilled in the art, such as an LDO or non-LDO 3-terminal regulator or the like.
The bias circuit may include a bias device and a current source. The bias device has a first terminal coupled to the output terminal of the voltage regulator and a second terminal coupled to the control electrode of the current control device. The current source has an input coupled to the first current electrode of the current control device and an output coupled to the second terminal of the bias device. A capacitor may be coupled between the first and second terminals of the bias device.
In the bias device and current source embodiment, the bias device may be implemented as a Zener diode, one or more diodes coupled in series, at least one light emitting diode, or any other bias device which develops sufficient voltage while receiving current from the current source. The current source may be implemented with a PNP BJT having its collector electrode coupled to the second terminal of the bias device, at least one first resistor having a first end coupled to the emitter electrode of the PNP BJT and a second end, a Zener diode and a second resistor. The Zener diode has an anode coupled to the base electrode of the PNP BJT and a cathode coupled to the second end of the first resistor. The second resistor has a first end coupled to the anode of the Zener diode and a second end coupled to the reference terminal of the voltage regulator. A second Zener diode may be included having an anode coupled to the cathode of the first Zener diode and a cathode coupled to the first current electrode of the current control device.
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- The EHT Output is realized with a selenium rectifier.
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The photoelectric and rectifying properties of selenium were observed by C. E. Fitts around 1886 but practical rectifier devices were not manufactured routinely until the 1930s. Compared with the earlier copper oxide rectifier, the selenium cell could withstand higher voltage but at a lower current capacity per unit area.
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